Smart Printed Triboelectric Wearable Sensor with High Performance for Glove-Based Motion Detection.

In a world increasingly driven by data, wearable triboelectric nanogenerators (TENGs) offer a convenient way to monitor and collect information about human body motions. To meet the demands of the large-scale production of wearable TENGs, material selection to realize a high conversion efficiency and simplify the fabrication process remains a challenge. To address these issues, we present a simple-structured wearable printed arc-shaped triboelectric sensor (PATS) for finger motion detection by leveraging inkjet printing technology. In this regard, pressure sensors composed of diverse materials based on dielectric-dielectric and metal-dielectric structures in contact-separation mode were fabricated and compared. Thanks to the unique characteristics of the silver nanoparticle (Ag-NP)-printed layer and silicon rubber (SR), the SR-Ag PATS shows a high peak-to-peak voltage of 14.15 V and a short-circuit current of 0.78 µA. The proposed sensor with the capability of accurately identifying finger motions at various bending angles suggests promising application potential in glove-based human-machine interface (HMI) systems.

Carbon-Related Materials: Graphene and Carbon Nanotubes in Semiconductor Applications and Design.

As the scaling technology in the silicon-based semiconductor industry is approaching physical limits, it is necessary to search for proper materials to be utilized as alternatives for nanoscale devices and technologies. On the other hand, carbon-related nanomaterials have attracted so much attention from a vast variety of research and industry groups due to the outstanding electrical, optical, mechanical and thermal characteristics. Such materials have been used in a variety of devices in microelectronics. In particular, graphene and carbon nanotubes are extraordinarily favorable substances in the literature. Hence, investigation of carbon-related nanomaterials and nanostructures in different ranges of applications in science, technology and engineering is mandatory. This paper reviews the basics, advantages, drawbacks and investigates the recent progress and advances of such materials in micro and nanoelectronics, optoelectronics and biotechnology.

Effects of device and peripheral parameters on transconductance of silicon nanowire transistors.

This paper presents a general analysis over the transconductance function in silicon nanowire transistors (SNWTs). The transconductance function in SNWTs has been well-discussed and the relation between this function and the physical and peripheral parameters of the SNWT has been precisely investigated. The transconductance expression has been derived as a function of device parameters (e.g., oxide capacitor, electron effective-mass) and applied voltage biases, which helps to understand the essential physics of one-dimensional (1D) nanowire FETs and to interpret numerical simulation results. These simulations demonstrate the transconductance formulation as a function of environmental temperature, voltage biases and oxide layer thickness.